Micron Semiconductor Ltd believes it has created the most custom AC and DC detectors in the world during the past 20 years with an estimated 200 individual designs. Many technology advances have been incorporated in the company including thicker and thinner multi-element totally depleting structures spanning the thickness range from 20 to 2000 microns. Designs include pads, microstrips and pixel geometries in single and double sided format. Annular structures with both radial and sector strips around a central hole are also a specialty.

The Company has made significant advances in utilizing 6 inch silicon technology. A wide range of custom detectors have been manufactured, the majority of which are double sided with the full 100 mm2 active area.

Capability for 6 inch processing has significantly expanded in March 2000 with in house installation of a VARIAN 300 XP ion implanter that produces virtually defect free detectors both single and double sided from thicknesses of 20 microns to 2000 microns.

Custom designs are a specialty, but there are no known restrictions for physicists to use these existing designs if considered suitable.

Year 2004 sees the advent of large area multi-element pixels as thin as 15 microns up to thicknesses of 2000 microns initially in 4-inch technology, but soon available 6-inch technology.

SILICON DETECTOR THICKNESS RANGE AVAILABLE FROM 2005:

*R & D
Full Depletion (FD) varies between 5 V and 500 V depending on the thickness.