High-density compound semiconductors with sufficiently-high photon attenuations, such as CdZnTe, are required for the detection of the high-energy X-rays (> 20 keV), typical to applications of the HEXITEC ASIC. However, in low-energy applications (2-20 keV), the lower electron-hole-pair generation energy of Si offers the potential of improved spectroscopic resolution. Si-based pixelated X-ray sensors are typically based on n-type material where holes are the carrier that form the signal measured on the pixels.
Working with Rutherford Labs and STFC , Micron Semiconductor Ltd has developed a p-type pixel detector for low energy (2-20KeV) X-ray detection with a double metal fan-in pitch adaptor to the readout chip. The processing was optimised and an UBM included for epoxy flip-chip bonding.
Potential applications include X-ray spectroscopy imaging.
For further information please contact sales@micronsemiconductor.co.uk